IRF630N description drain current ?i d =9.3a@ t c =25 drain source voltage- : v dss = 200v(min) static drain-source on-resistance : r ds(on) = 0.3 (max) fast switching speed low drive requirement applications this device is n-channel, enhanc ement mode, power mosfet designed especially for high power, high speed applications, such as switching power supplies,ups, ac and dc motor con- trols, relay and solenoid drivers and high energy pulse circuits. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 200 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 9.3 a p d total dissipation@tc=25 82 w t j max. operating junc tion temperature 175 t stg storage temperature range -55~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.83 /w r th j-a thermal resistance,junction to ambient 62 /w www.kersemi.com
IRF630N electrical characteristics (t =25 c ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs =0; i d =0.25ma 200 v v gs (th) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds(on) drain-source on-stage resistance v gs =10v; i d =5.4a 0.3 i gss gate source leakage current v gs = 20v;v ds =0 100 na i dss zero gate voltage drain current v ds =200v; v gs =0 25 ua v sd diode forward voltage i f = 5.4a; v gs =0 1.3 v www.kersemi.com
|
